IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 7

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 17a. Gate Charge Test Circuit
D.U.T
20K
1K
ƒ
Fig 16.
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SD
S
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•
DUT
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„
G
L
HEXFET
+
V
VCC
®
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Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Id
Vgs
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
Fig 17b. Gate Charge Waveform
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Qgodr
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgs2
Vgs(th)
Vds
Qgs1
V
V
I
SD
GS
DD
=10V
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