IRF8313PBF International Rectifier, IRF8313PBF Datasheet - Page 5

• Manufacturer Part Number: IRF8313PBF
• Description: MOSFET N-CH DUAL 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier

Specifications of IRF8313PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 760pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 21.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
10
10
1
1E-006
8
6
4
2
0
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
D = 0.50
Ambient Temperature
0.20
0.10
0.05
0.02
0.01
50
1E-005
T A , Ambient Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
0.001
t 1 , Rectangular Pulse Duration (sec)
150
τ
J
τ
J
τ
175
1
Ci= τi/Ri
0.01
τ
1
Ci i/Ri
R
1
R
1
τ
Fig 10. Threshold Voltage vs. Temperature
2
R
τ
2
2
R
2
2.5
2.0
1.5
1.0
0.5
0.1
R
τ
3
3
R
τ
-75 -50 -25 0
3
3
τ
R
4
τ
4
R
4
4
R
τ
5
5
R
τ
5
5
1
I D = 25μA
R
τ
6
6
R
τ
T J , Temperature ( °C )
6
6
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
τ
7
7
R
τ
7
7
25 50 75 100 125 150 175
R
τ
8
8
I D = 250μA
R
τ
8
8
10
τ
a
18.0102679
Ri (°C/W)
0.1396039
0.4048955
0.5273926
1.2084906
1.5779475
7.0394610
33.5929564
100
27.798341
0.000010
0.000030
0.000020
0.001289
0.000340
0.009747
0.575346
τι (sec)
5
1000