IRF7389PBF International Rectifier, IRF7389PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7389PBF
• Description: MOSFET N+P 30V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7389PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A, 5.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 7.3/-5.3 N/P A
• Package Type: SO-8
• Power Dissipation: 2.5/2.5 N/P W
• Resistance, Drain To Source On: 0.046/0.098 N/P Ohm
• Thermal Resistance, Junction To Ambient: 50/50 N/P °C/W
• Voltage, Drain To Source: 30/-30 N/P V
• Voltage, Gate To Source: +-20 V
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17 ns, 32 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8.9 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Notes:
∆
S
SM
DSS
d(on)
r
d(off)
f
rr
GSS
fs
P-Channel
(BR)DSS
GS(th)
SD
DS(ON)
iss
oss
rss
rr
g
gs
gd
N-Channel
N-Channel I
P-Channel I
2
(BR)DSS
∆
J
SD
SD
≤
≤
≤
≤
≤
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≤
Ω
Ω
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≤
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D
D
GS
GS
J
J
DD
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J
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
≤
Ω
Ω
GS
GS D
D
D
DS
DS
DS
F
F
D
D
D
D
S
S
DS
D
D
D
GS
D
GS
D
GS
GS
D
D
„
„
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GS
GS
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G
J
GS
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GS
G
≤
Ω,
Ω
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≤
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