IRF7389PBF International Rectifier, IRF7389PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7389PBF
• Description: MOSFET N+P 30V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7389PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A, 5.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N amd P
• Current, Drain: 7.3/-5.3 N/P A
• Package Type: SO-8
• Power Dissipation: 2.5/2.5 N/P W
• Resistance, Drain To Source On: 0.046/0.098 N/P Ohm
• Thermal Resistance, Junction To Ambient: 50/50 N/P °C/W
• Voltage, Drain To Source: 30/-30 N/P V
• Voltage, Gate To Source: +-20 V
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17 ns, 32 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8.9 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.16
0.12
0.08
0.04
0.00
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
4.9A
T , Junction Temperature ( C)
3
J
0
20 40 60 80 100 120 140 160
6
9
I
D
= -4.9A
V
°
GS
12
=
10V
15
A
300
250
200
150
100
50
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
0
Starting T , Junction Temperature ( C)
50
J
V
10
GS
75
= -4.5V
100
TOP
BOTTOM
20
V
GS
125
= -10V
-1.3A
-2.2A
-2.8A
°
I D
150
30
7
A