IRF7389PBF International Rectifier, IRF7389PBF Datasheet

MOSFET N+P 30V 5.3A 8-SOIC

IRF7389PBF

Manufacturer Part Number
IRF7389PBF
Description
MOSFET N+P 30V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7389PBF

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.3A, 5.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N amd P
Current, Drain
7.3/-5.3 N/P A
Package Type
SO-8
Power Dissipation
2.5/2.5 N/P W
Resistance, Drain To Source On
0.046/0.098 N/P Ohm
Thermal Resistance, Junction To Ambient
50/50 N/P °C/W
Voltage, Drain To Source
30/-30 N/P V
Voltage, Gate To Source
+-20 V
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
46 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
17 ns, 32 ns
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.9 ns, 13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7389PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7389PBF
Quantity:
95
l
l
l
l
l
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www.irf.com
G2
G1
S2
S1
I
P
D
D
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
θ
8
7
6
5
D1
D1
D2
D2
SO-8
DS(on)
DSS
V
1

Related parts for IRF7389PBF

IRF7389PBF Summary of contents

Page 1

N-CHANNEL MOSFET DSS P-CHANNEL MOSFET DS(on) Top View SO ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes:  ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel I SD ƒ N-Channel ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150° ...

Page 4

1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0.08 0. 5.8A D 0.04 0.02 0.00 0 ...

Page 5

1MHz iss rss oss ds gd 900 C iss C oss 600 C rss 300 ...

Page 6

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 -3.0V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T ...

Page 7

1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.16 0.12 0.08 0.04 0. www.irf.com 0.6 0.5 ...

Page 8

GS 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 ...

Page 9

SO-8 Package Outline Dimensions are shown in milimeters (inches) SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL 100 www.irf.com 0.25 [.010] ...

Page 10

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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