IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7910TRPBF
• Description: MOSFET DUAL N-CH 12V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7910TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
0.01
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
100
10
10
1
1
0.1
1.0
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
2.0
20µs PULSE WIDTH
Tj = 25°C
1
V DS = 10V
20µs PULSE WIDTH
1.5V
3.0
10
4.0
1000
100
0.1
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
I
D
=
-40
10A
V DS , Drain-to-Source Voltage (V)
-20
Vs. Temperature
0
IRF7910PbF
20
20µs PULSE WIDTH
Tj = 150°C
40
1
1.5V
60
80
100
V
120
GS
=
140
4.5V
3
10
160