IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
IRF7910TRPBF
Manufacturer Part Number
IRF7910TRPBF
Description
MOSFET DUAL N-CH 12V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7910TRPBF.pdf
(8 pages)
Specifications of IRF7910TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
2 N-Channel (Dual)
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Vgs(th) (max) @ Id
2V @ 250µA
Current - Continuous Drain (id) @ 25° C
10A
Drain To Source Voltage (vdss)
12V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 8A, 4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7910TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7910PbF
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
0.0145
0.0140
0.0135
0.0130
0.0125
0.0120
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
.3µF
0
I
G
V
(BR)DSS
D.U.T.
I
V GS = 4.5V
D
and Waveforms
20
and Waveform
+
-
V
I D , Drain Current (A)
DS
V
40
R G
GS
20V
V DS
t p
V
G
Q
I AS
GS
D.U.T
60
0.01 Ω
L
Charge
Q
Q
GD
G
80
15V
DRIVER
+
-
100
V DD
A
0.020
0.018
0.015
0.013
0.010
Fig 13. On-Resistance Vs. Gate Voltage
250
200
150
100
50
0
25
Fig 15c. Maximum Avalanche Energy
2.5
Starting T , Junction Temperature
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
J
3.5
75
I D = 8.0A
100
TOP
BOTTOM
4.5
www.irf.com
125
( C)
°
I D
3.6A
6.4A
8.0A
150
5.5