NTJD4152PT1G ON Semiconductor, NTJD4152PT1G Datasheet
NTJD4152PT1G
Manufacturer Part Number
NTJD4152PT1G
Description
MOSFET 2P-CH 20V 880MA SOT-363
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of NTJD4152PT1G
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
260 mOhm @ 880mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
880mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
2.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
155pF @ 20V
Power - Max
272mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.88 A
Power Dissipation
272 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
880mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
215mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.26Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTJD4152PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTJD4152PT1G
Manufacturer:
ON
Quantity:
36 000
Company:
Part Number:
NTJD4152PT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
NTJD4152PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTJD4152PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P-Channel,
ESD Protected SC-88
Features
•
•
•
•
Applications
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
2. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 2
MAXIMUM RATINGS
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 2)
THERMAL RESISTANCE RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Power Dissipation
(Note 1)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction-to-Ambient – Steady State
Junction-to-Ambient - t v 5 s
Junction-to-Lead – Steady State
Leading Trench Technology for Low R
Small Footprint Package (SC70-6 Equivalent)
ESD Protected Gate
Pb-Free Package is Available
Load/Power Management
Charging Circuits
Load Switching
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
Parameter
Parameter
(T
t v 5 s
t v 5 s
Steady
Steady
J
State
State
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
t ≤ 10 ms
A
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
(Note 1)
DS(ON)
Symbol
V
T
V
I
T
Symbol
P
P
DSS
DM
STG
T
I
I
I
GS
D
D
S
J
D
D
L
R
R
R
Performance
,
qJA
qJA
qJL
-55 to
Value
-0.88
-0.63
0.272
0.141
-0.72
0.181
-0.48
-1.0
0.35
±3.0
-20
±12
150
260
Max
460
357
226
1
°C/W
Unit
Unit
°
°C
W
W
V
V
A
A
A
A
C
†For information on tape and reel specifications,
NTJD4152PT1
NTJD4152PT1G
V
SC-88/SOT-363
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(BR)DSS
-20 V
CASE 419B
Device
STYLE 28
(Note: Microdot may be in either location)
D
G
S
2
1
1
ORDERING INFORMATION
TK
M
G
1
215 mW @ -4.5 V
345 mW @ -2.5 V
600 mW @ -1.8 V
1
2
3
http://onsemi.com
R
DS(on)
(Pb-Free)
SOT-363
SOT-363
Package
= Device Code
= Date Code
= Pb-Free Package
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
Typ
Publication Order Number:
6
1
D1 G2 S2
S1 G1 D2
TK M G
3000 Units/Reel
3000 Units/Reel
G
6
5
4
Shipping
NTJD4152/D
-0.88 A
I
D
Max
D
G
S
2
1
2
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NTJD4152PT1G Summary of contents
Page 1
... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NTJD4152PT1 SOT-363 3000 Units/Reel SOT-363 NTJD4152PT1G 3000 Units/Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTJD4152/D ...
Page 2
ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total ...
Page 3
TYPICAL PERFORMANCE CURVES -4.5, -3.5 & -2 0.75 0.5 0. 0.4 0.8 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0 -4 ...
Page 4
TYPICAL PERFORMANCE CURVES 350 iss 300 250 C rss 200 150 100 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. ...
Page 5
... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...