NTJD4152PT1G ON Semiconductor, NTJD4152PT1G Datasheet - Page 4

• Manufacturer Part Number: NTJD4152PT1G
• Description: MOSFET 2P-CH 20V 880MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 880mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 155pF @ 20V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.88 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 880mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 215mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4152PT1GOSTR

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
350
300
250
200
150
100
10
50
1
0
10
1
Figure 9. Resistive Switching Time Variation
C
C
iss
rss
t
t
d(off)
d(on)
t
t
r
f
V
5
DS
R
Figure 7. Capacitance Variation
G
= 0 V
, GATE RESISTANCE (OHMS)
V
vs. Gate Resistance
GS
0
TYPICAL PERFORMANCE CURVES
V
V
DS
GS
= 0 V
10
5
10
V
I
V
D
DD
GS
= -0.8 A
= -10 V
= -4.5 V
C
T
15
J
oss
= 25°C
http://onsemi.com
NTJD4152P
100
20
4
0.5
0.4
0.3
0.2
0.1
(T
5
4
3
2
1
0
0
J
0
0
= 25°C unless otherwise noted)
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate-to-Source Voltage vs. Total
GS
J
-V
Q1
= 25°C
0.1
SD
= 0 V
0.4
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Q
0.2
g
, TOTAL GATE CHARGE (nC)
0.8
Q2
Gate Charge
0.3
QT
1.2
0.4
0.5
1.6
I
T
D
0.6
J
= -0.88 A
= 25°C
2
0.7