NTJD4152PT1G ON Semiconductor, NTJD4152PT1G Datasheet - Page 3

• Manufacturer Part Number: NTJD4152PT1G
• Description: MOSFET 2P-CH 20V 880MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 880mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 155pF @ 20V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.88 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 880mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 215mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4152PT1GOSTR

0.25
0.75
0.25
0.15
0.5
0.3
0.2
0.1
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
-50
0
Figure 3. On-Resistance vs. Drain Current and
V
I
V
-V
GS
D
GS
Figure 1. On-Region Characteristics
= -0.88 A
-25
DS
= -4.5 V
Figure 5. On-Resistance Variation with
= -4.5 V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.4
-2 V
-I
T
0.25
J
D,
, JUNCTION TEMPERATURE (°C)
0
DRAIN CURRENT (AMPS)
V
TYPICAL PERFORMANCE CURVES
GS
0.8
Temperature
= -4.5, -3.5 & -2.5 V
25
Temperature
T
T
T
J
J
J
0.5
= 125°C
= 25°C
= -55°C
50
1.2
75
0.75
100
1.6
T
J
= 25°C
-1.75 V
-1.25 V
-1.5 V
-1 V
http://onsemi.com
125
NTJD4152P
150
2
1
3
10000
1000
100
2.5
2.0
1.5
1.0
0.5
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
(T
0
1
0
0.4
J
0
Figure 4. On-Resistance vs. Drain Current and
0
= 25°C unless otherwise noted)
V
V
T
Figure 6. Drain-to-Source Leakage Current
GS
DS
J
-V
= 25°C
-V
= 0 V
DS
≥ -20 V
0.5
GS
0.5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
25°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-I
D,
5
125°C
DRAIN CURRENT (AMPS)
1
0.6
Gate Voltage
vs. Voltage
1.5
T
T
T
J
J
J
= 150°C
= 125°C
10
0.7
= -55°C
V
V
2
GS
GS
= -2.5 V
= -4.5 V
0.8
2.5
15
V
GS
0.9
= -1.8 V
3
3.5
20
1