UPA573T-T1-A Renesas Electronics America, UPA573T-T1-A Datasheet
UPA573T-T1-A
Specifications of UPA573T-T1-A
Related parts for UPA573T-T1-A
UPA573T-T1-A Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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P-CHANNEL MOSFET (5-PIN 2 CIRCUITS) DESCRIPTION The μ PA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size ...
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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A TRANSFER CHARACTERISTICS –100 V = – ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 V = –2 Pulsed measurement –25 ˚C 25 ˚ –0.3 –0.5 –1 – Drain Current - mA D CAPACITANCE ...
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The information in this document is current as of April, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...