UPA573T-T1-A Renesas Electronics America, UPA573T-T1-A Datasheet - Page 4

• Manufacturer Part Number: UPA573T-T1-A
• Description: MOSFET P-CH DUAL 30V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA573T-T1-A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 2.3V @ 10µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

2
ELECTRICAL CHARACTERISTICS (T
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
0
GS
PG.
τ = 1 s
Duty Cycle ≤ 1 %
PARAMETER
μ
τ
R
G
SYMBOL
R
R
V
C
t
t
I
I
|y
DS(on)1
DS(on)2
C
C
GS(off)
DUT
d(on)
d(off)
DSS
GSS
t
t
oss
iss
rss
fs
r
f
|
V
V
V
V
V
V
V
V
R
A
DD
DS
GS
DS
DS
GS
GS
DS
G
Data Sheet G11245EJ3V0DS
= 10 Ω
= 25 ˚C)
= – 5 V, I
= –30 V, V
= +5 V, V
= –3 V, I
= –3 V, I
= –2.5 V, I
= –4.0 V, I
= –5.0 V, V
TEST CONDITIONS
D
D
D
DS
R
= –10 mA, V
= –10 μ A
= –10 mA
D
D
GS
V
L
GS
= 0
= –1 mA
= –10 mA
DD
= 0
= 0, f = 1 MHz
Gate
voltage
waveform
Drain
current
waveform
GS
= –5 V,
V
I
D
GS
0
10 %
t
d(on)
10 %
MIN.
–1.6
20
90 %
TYP.
–1.9
130
t
30
55
20
16
13
10
40
80
2
r
V
I
D
GS(on)
t
d(off)
MAX.
–1.0
+3.0
–2.3
100
25
90 %
90 %
μ PA573T
UNIT
10 %
μ A
μ A
pF
pF
pF
ns
ns
ns
ns
t
V
S
Ω
Ω
f