UPA573T-T1-A Renesas Electronics America, UPA573T-T1-A Datasheet - Page 6

• Manufacturer Part Number: UPA573T-T1-A
• Description: MOSFET P-CH DUAL 30V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA573T-T1-A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 2.3V @ 10µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

4
–200
–100
–0.3
–0.1
100
–30
–10
0.5
80
60
40
20
40
20
10
–3
–1
0
5
2
1
–0.3
–0.3
–0.4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
Pulsed
measurement
V
Pulsed
measurement
GS
–0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3
GS
= 0 V
= –2.5 V
–0.5
V
V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DS
SD
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1
- Drain to Source Voltage - V
- Source to Drain Voltage - V
T
I
D
A
- Drain Current - mA
= –25 ˚C
–1
–3
–2
25 ˚C
–10
75 ˚C
V
f = 1 MHz
–5
GS
150 ˚C
= 0 V
Data Sheet G11245EJ3V0DS
C
C
C
iss
oss
rss
–10
–30
–100
100
300
100
–80
–60
–40
–20
80
60
40
20
50
10
0
0
–10
–1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
V
R
T
DD
GS
G
A
= 10 Ω
SWITCHING CHARACTERISTICS
= –5 V
= –5 V
= 150 ˚C
–2
V
–20
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–1
DS
- Drain to Source Voltage - V
I
I
D
D
- Drain Current - mA
- Drain Current - mA
–4.5 V
–2
–5
–50
–25 ˚C
–10
25 ˚C
–4.0 V
–3
75 ˚C
–100
–20
V
Pulsed
measurement
V
GS
GS
–4
= –4.0 V
= –2.5 V
t
t
t
t
–3.5 V
–3.0 V
r
f
d(on)
d(off)
μ PA573T
–300
–60
–5