NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet - Page 2

• Manufacturer Part Number: NTGD4167CT1G
• Description: MOSFET N/P-CH 30V DUAL 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4167CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
V
V
(BR)DSS
(T
Symbol
Q
Q
V
R
Q
Q
t
t
(BR)DSS
C
C
t
t
C
C
d(OFF)
d(OFF)
I
GS(TH)
C
C
G(TOT)
Q
G(TOT)
Q
J
I
DS(on)
Q
Q
d(ON)
d(ON)
g
DSS
GSS
G(TH)
G(TH)
OSS
RSS
OSS
RSS
= 25°C unless otherwise noted)
ISS
ISS
t
t
FS
GS
GD
GS
GD
t
t
r
f
r
f
/T
J
N/P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
http://onsemi.com
V
V
V
V
V
f = 1 MHz, V
GS
GS
GS
GS
GS
V
GS
= 0 V, V
= 0 V, V
2
= 0 V, V
= 0 V, V
= −4.5 V, V
V
V
V
V
V
= 4.5 V, V
V
V
V
V
GS
GS
GS
V
V
I
GS
DS
GS
V
I
D
DS
DS
GS
D
GS
GS
DS
= V
= −1.0 A, R
= −4.5 V, V
= 0 V
= 1.0 A, R
Test Conditions
= −4.5 V , I
= −15 V , I
= −2.5 V, I
DS
DS
= 4.5 V, V
= 0 V, V
= 0 V, V
= 2.5 V , I
DS
DS
= 4.5 V , I
= 15 V, I
GS
DS
= −24 V
= −24 V
= 24 V
= 24 V
DS
= 0 V
DS
= −15 V, I
= 15 V, I
GS
GS
G
D
DD
DD
G
D
D
D
D
D
= 6.0 W
= 2.6 A
= −1.0 A
= −1.9 A
= 6.0 W
= ±12 V
= ±12 V
= 2.6 A
= 2.2 A
= −1.9 A
= 15 V,
= −15 V,
I
I
V
I
D
I
D
V
D
D
T
T
D
D
DS
DS
= −250 mA
J
J
= −250 mA
= 2.0 A
= 250 mA
= 250 mA
= −2.0 A
= 25 °C
= 85 °C
= −15 V
= 15 V
−0.5
Min
−30
0.5
30
21.4
22.2
−1.1
Typ
130
202
295
419
0.9
2.6
2.6
3.7
0.6
0.9
0.8
3.9
0.6
1.0
1.0
7.0
4.0
2.0
8.0
8.0
8.0
52
67
48
27
51
26
14
22
±100
±100
Max
−1.0
−1.5
−10
125
170
300
1.0
1.5
5.5
6.0
10
90
mV/°C
Unit
mW
mA
nA
pF
nC
ns
V
V
S