NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet - Page 6

• Manufacturer Part Number: NTGD4167CT1G
• Description: MOSFET N/P-CH 30V DUAL 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4167CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NTGD4167C
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Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. FET Thermal Response
http://onsemi.com
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