NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet - Page 4

• Manufacturer Part Number: NTGD4167CT1G
• Description: MOSFET N/P-CH 30V DUAL 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4167CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
0
1.0
−50
I
V
D
Figure 3. On−Region vs. Gate−To−Source
GS
0.5
Figure 5. On−Resistance Variation with
= 2.6 A
1.5
−25
Figure 1. On−Region Characteristics
2.5 V
V
= 4.5 V
DS
T
1.0
, DRAIN−TO−SOURCE VOLTAGE (V)
J
V
, JUNCTION TEMPERATURE (°C)
2.0
GS
3.5 V
0
V
1.5
= 4.5 V
GS
, GATE VOLTAGE (V)
I
D
2.5
25
Temperature
2.0
= 2.6 A
Voltage
2.5
3.0
50
N−CHANNEL TYPICAL CHARACTERISTICS
3.0
3.5
75
3.5
100
4.0
T
T
4.0
J
J
= 25°C
= 25°C
http://onsemi.com
2.0 V
1.5 V
4.5
125
4.5
5.0
5.0
150
4
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
400
350
300
250
200
150
100
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
50
0
0.75
0
0
Figure 4. On−Resistance vs. Drain Current and
V
T
C
DS
J
RSS
1.0
= 25°C
= 5 V
V
1
V
Figure 2. Transfer Characteristics
DS
5
GS
Figure 6. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
2.0
, GATE−TO−SOURCE VOLTAGE (V)
125°C
1.25
I
D
C
, DRAIN CURRENT (A)
3.0
10
ISS
V
V
Temperature
GS
GS
1.5
C
4.0
OSS
= 2.5 V
= 4.5 V
15
5.0
1.75
25°C
−55°C
6.0
20
2
7.0
T
V
f = 1 MHz
J
GS
25
2.25
= 25°C
= 0 V
8.0
2.5
9.0
30