NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 2

• Manufacturer Part Number: NTUD3169CZT5G
• Description: MOSFET N/P-CH 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3169CZT5G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA, 200mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.48 S, 0.35 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.2 A @ P Channel
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

THERMAL RESISTANCE RATINGS
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
CAPACITANCES
4. Switching characteristics are independent of operating junction temperatures
Junction−to−Ambient – Steady State, Minimum Pad (Note 3)
Junction−to−Ambient – t v 5 s (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
(T
V
Symbol
V
R
(BR)DSS
C
C
C
C
GS(TH)
J
I
I
I
C
C
DS(on)
V
g
DSS
DSS
GSS
OSS
RSS
OSS
RSS
= 25°C unless otherwise specified)
FS
SD
ISS
ISS
N/P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
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V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
= 0 V, V
= 0 V, I
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, I
2
V
V
V
V
V
V
V
V
V
V
DS
V
GS
V
GS
V
V
V
GS
GS
GS
GS
GS
GS
DS
GS
DS
GS
GS
GS
f = 1 MHz, V
f = 1 MHz, V
= −5.0 V, I
= −4.5V, I
= −1.2 V, I
= V
= −1.5 V, I
= 0 V
= 4.5 V, I
= −2.5V, I
= −1.8V, I
= 5.0 V, I
S
Test Condition
DS
= 1.2 V, I
= 0 V, V
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
S
Symbol
DS
DS
DS
= −10 mA
V
V
= 10 mA
R
DS
DS
= −5.0 V
= −16 V
DS
= 5.0 V
qJA
= 16 V
= −15 V
= 15 V
GS
D
D
D
D
D
D
D
D
D
D
D
D
GS
GS
= 100 mA
= −100 mA
= 125 mA
= −125 mA
= 1.0 mA
= −1.0 mA
= −50 mA
= −20 mA
= 50 mA
= 20 mA
= 10 mA
= −10 mA
= ±5.0 V
= 0 V
= 0 V
I
I
I
D
I
D
D
D
T
T
T
T
T
T
= −250 mA
= −250 mA
J
J
J
J
J
J
= 250 mA
= 250 mA
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 25°C
1000
Max
600
−0.4
Min
−20
0.4
20
0.75
0.48
0.35
−0.6
12.5
13.5
Typ
2.0
1.0
2.6
1.4
3.4
1.8
4.0
2.8
6.0
0.6
3.6
2.6
3.8
2.0
−200
−100
±100
±100
Max
−1.0
−1.0
200
−50
100
1.0
1.5
5.0
2.0
6.0
3.0
7.0
4.5
1.0
50
10
°C/W
Unit
Unit
nA
nA
nA
pF
W
V
V
S
V