NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 5
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NTUD3169CZT5G
Manufacturer Part Number
NTUD3169CZT5G
Description
MOSFET N/P-CH 20V SOT-963
Manufacturer
ON Semiconductor
Datasheet
1.NTUD3169CZT5G.pdf
(8 pages)
Specifications of NTUD3169CZT5G
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.5 Ohm @ 100mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
220mA, 200mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
12.5pF @ 15V
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.48 S, 0.35 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.22 A @ N Channel or 0.2 A @ P Channel
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTUD3169CZT5G
Manufacturer:
ON Semiconductor
Quantity:
41
Company:
Part Number:
NTUD3169CZT5G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTUD3169CZT5G
Manufacturer:
ON/安森美
Quantity:
20 000
20.0
17.5
15.0
12.5
10.0
7.50
5.00
2.50
GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V)
0
0
C
C
C
Figure 7. Capacitance Variation
oss
rss
iss
5
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
10
0
TYPICAL CHARACTERISTICS (N−CHANNEL)
0
Figure 9. Diode Forward Voltage vs. Current
V
T
GS
J
= 25°C
V
= 0 V
SD
0.2
15
, SOURCE−TO−DRAIN VOLTAGE (V)
V
T
GS
J
= 25°C
http://onsemi.com
= 0 V
0.4
20
5
1000
0.6
100
10
1
1
Figure 8. Resistive Switching Time Variation
V
I
V
D
DD
GS
= 200 mA
0.8
= 10 V
= 4.5 V
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1
10
t
t
t
t
d(off)
d(on)
f
r
100