NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 3

• Manufacturer Part Number: NTUD3169CZT5G
• Description: MOSFET N/P-CH 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3169CZT5G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA, 200mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.48 S, 0.35 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.2 A @ P Channel
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS, V
4. Switching characteristics are independent of operating junction temperatures
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
GS
= 4.5 V (Note 4)
(T
Symbol
t
t
t
t
d(OFF)
d(OFF)
J
d(ON)
d(ON)
= 25°C unless otherwise specified)
t
t
t
t
r
f
r
f
N/P
N
P
http://onsemi.com
V
GS
= 4.5 V, V
3
V
I
D
GS
= −200 mA, R
= −4.5 V, V
Test Condition
R
DD
G
= 2.0 W
= 10 V, I
DD
G
= −15 V,
= 2.0 W
D
= 200 mA,
Min
16.5
25.5
Typ
142
196
145
80
26
46
Max
Unit
ns