UPA2450BTL-E1-A Renesas Electronics America, UPA2450BTL-E1-A Datasheet
UPA2450BTL-E1-A
Specifications of UPA2450BTL-E1-A
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UPA2450BTL-E1-A Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA2450B is a switching device, which can be driven directly by a 2.5 V power source. µ The PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 1000 R Limited DS(on) ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed 4.0 V 3 0.2 0.4 0.6 0 Drain to Source Voltage - V DS GATE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 3.1 V 4 100 T - Channel Temperature - °C ...
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When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of ...
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This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 characteristic of a device may be degraded and it may result in ...
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The information in this document is current as of January, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...