UPA2450BTL-E1-A Renesas Electronics America, UPA2450BTL-E1-A Datasheet - Page 8

• Manufacturer Part Number: UPA2450BTL-E1-A
• Description: MOSFET N-CH DUAL 20V 6-HWSON
• Manufacturer: Renesas Electronics America

Specifications of UPA2450BTL-E1-A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 8nC @ 4V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<Notes for using this device safely>
the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of
the device and characteristic degradation.
1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed
3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator
4. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density,
6
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in
failure.
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
appearance of solder fillets, common difference, etc in an actual design.
0.50
Figure 1. Example of the land pattern
Data Sheet G16635EJ1V0DS
2.04
3.86
0.83
Unit: mm
0.30
µ
PA2450B