UPA2450BTL-E1-A Renesas Electronics America, UPA2450BTL-E1-A Datasheet - Page 9

• Manufacturer Part Number: UPA2450BTL-E1-A
• Description: MOSFET N-CH DUAL 20V 6-HWSON
• Manufacturer: Renesas Electronics America

Specifications of UPA2450BTL-E1-A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 8nC @ 4V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
Note 1. Definition of rate of distortion(written as ε in this document)
applied to the device should become below 2000
characteristic of a device may be degraded and it may result in failure.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
ε = (l − l
l
l: Distance above-mentioned when receiving stress.
so on.
0
: Distance for two arbitrary points before receiving stress.
0
)/l
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
0
Support width 24 mm
6000
5000
4000
3000
2000
1000
0
Figure 3. Example of the bend and the rate of distortion
0
Stress
0.2
Figure 2. Direction of substrate and stress
Bend - mm
0.4
Data Sheet G16635EJ1V0DS
0.6
µ
ε.
Note1
0.8
If the rate of distortion exceeds 2000
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Measurement position
Device
1
Recommended condition
Bend
Note2
µ
ε, the
µ
PA2450B
7