IRF7309QTRPBF International Rectifier, IRF7309QTRPBF Datasheet
IRF7309QTRPBF
Manufacturer Part Number
IRF7309QTRPBF
Description
MOSFET N/P-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7309QTRPBF.pdf
(11 pages)
Specifications of IRF7309QTRPBF
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A, 3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Input Capacitance (ciss) @ Vds
520pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7309QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7309QTRPBF
Manufacturer:
IR
Quantity:
20 000
l
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Description
These HEXFET
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
www.irf.com
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in a Dual
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
HEXFET Power MOSFET
8
7
6
5
D1
D1
D2
D2
SO-8
DS(on)
DSS
N-Ch
Ω
P-Ch
Ω
1
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IRF7309QTRPBF Summary of contents
Page 1
Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET Dual SO-8 ...
Page 2
2 www.irf.com ...
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www.irf.com 3 ...
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4 www.irf.com ...
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www.irf.com 5 ...
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6 www.irf.com ...
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www.irf.com 7 ...
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8 www.irf.com ...
Page 9
Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ Fig 24. www.irf.com + • • • • G ...
Page 10
SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENSIONING & T ...
Page 11
SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...