NTHD4401PT1G ON Semiconductor, NTHD4401PT1G Datasheet
NTHD4401PT1G
Specifications of NTHD4401PT1G
NTHD4401PT1GOS
NTHD4401PT1GOSTR
Available stocks
Related parts for NTHD4401PT1G
NTHD4401PT1G Summary of contents
Page 1
... T 260 L Symbol Value Unit °C/W R 110 qJA 60 Device NTHD4401PT1 NTHD4401PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D 130 mW @ −4.5 V −3.0 A 200 mW @ − ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...
Page 3
TYPICAL PERFORMANCE CURVES − − −2 −2 −1 −1 −1.4 V −1 −V , DRAIN−TO−SOURCE ...
Page 4
TYPICAL PERFORMANCE CURVES 10000 150°C J 1000 T = 100°C J 100 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 7. Drain−to−Source Leakage Current vs. Voltage 6 ...
Page 5
... SCALE 20:1 0.026 Figure 13. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 13. This is sufficient for low power dissipation MOSFET ...
Page 6
... N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...