NTHD4401PT1G ON Semiconductor, NTHD4401PT1G Datasheet - Page 5

• Manufacturer Part Number: NTHD4401PT1G
• Description: MOSFET PWR P-CH DUAL20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4401PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4401PT1GOS; NTHD4401PT1GOS; NTHD4401PT1GOSTR

Figure 13. This is sufficient for low power dissipation
MOSFET
performance requires a greater copper pad area, particularly
for the drain leads.
Figure 14 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the
The basic pad layout with dimensions is shown in
The minimum recommended pad pattern shown in
0.01
1.0
0.1
1.0E−03
0.457
0.018
D = 0.5
0.05
0.02
0.2
0.1
SINGLE PULSE
applications,
0.026
0.66
Figure 13. Basic
0.01
1.0E−02
2.032
0.08
0.711
0.028
but
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
power
SCALE 20:1
1.0E−01
semiconductor
Figure 12. Thermal Response
0.635
0.025
SOLDERING FOOTPRINT*
inches
BASIC PAD PATTERNS
mm
http://onsemi.com
NTHD4401P
t, TIME (s)
5
Chip
1.0E+00
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
0.0175 Ω
0.0154 F
0.457
0.018
0.635
0.025
0.0854 F
0.0710 Ω
1.0E+01
0.026
Normalized to θJA at 10s.
0.66
Figure 14. Style 2
0.2706 Ω
0.3074 F
2.032
0.08
1.7891 F
0.5776 Ω
0.254
0.010
1.0E+02
SCALE 20:1
0.7086 Ω
107.55 F
1.092
0.043
Ambient
inches
mm
1.0E+03
0.178
0.007