NTHD4401PT1G ON Semiconductor, NTHD4401PT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD4401PT1G
• Description: MOSFET PWR P-CH DUAL20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4401PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4401PT1GOS; NTHD4401PT1GOS; NTHD4401PT1GOSTR

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
Symbol
V
(Br)DSS
Q
R
V
Q
GS(th)
(Br)DSS
t
t
I
C
G(TOT)
Q
I
DS(on)
Q
Q
GS(th)
C
C
V
g
d(on)
d(off)
DSS
GSS
G(TH)
t
t
t
oss
t
t
FS
rss
GS
GD
SD
RR
iss
rr
a
b
r
f
/T
/T
http://onsemi.com
J
J
NTHD4401P
V
V
V
V
V
DS
V
V
V
V
V
V
GS
GS
V
GS
GS
V
I
2
GS
GS
GS
D
DS
GS
DS
GS
GS
= −16 V
= −2.1 A, R
= 0 V, dI
= −4.5 V, V
= −4.5 V, V
= 0 V
Test Condition
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= 0 V, V
= V
= −10 V, I
= 0 V, I
= 0 V, f = 1.0 MHz,
V
I
I
I
V
D
S
DS
S
DS
GS
= −2.1 A
= −2.1 A
= −2.5 A
, I
= −10 V
S
D
= 0 V
GS
D
/dt = 90 A/ms,
= −250 mA
D
= −250 mA
DD
G
D
D
D
DS
= "12 V
= −2.1 A
= −2.1 A
= −1.7 A
= −1.0 A
= 2.5 W
T
T
= −10 V,
= −16 V,
J
J
= 25°C
= 85°C
−0.6
Min
−20
−0.75
0.130
0.200
−0.85
−8.0
2.65
0.34
Typ
−23
185
5.0
3.0
0.2
0.5
0.9
7.0
95
30
13
33
27
32
10
22
15
"100
0.155
0.240
−1.15
Max
−1.0
−5.0
−1.2
300
150
6.0
50
12
25
50
40
mV/°C
mV/°C
Unit
nA
nC
nC
mA
pF
ns
ns
W
V
V
S
V