SI3457BDV-T1-E3 Vishay, SI3457BDV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3457BDV-T1-E3
• Description: MOSFET P-CH 30V 3.7A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3457BDV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Power - Max: 1.14W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1140 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3457BDV-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72019
S09-0136-Rev. E, 02-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
DS
V
= 5 A
0.2
Source-Drain Diode Forward Voltage
GS
= 10 V
2
On-Resistance vs. Drain Current
= 4.5 V
4
V
SD
0.4
Q
4
- Source-to-Drain Voltage (V)
g
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
0.6
8
6
T
J
= 150 °C
0.8
8
12
V
GS
1.0
10
T
J
= 10 V
= 25 °C
16
1.2
12
1.4
20
14
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
I
= 5 A
D
= 10 V
= 2 A
2
6
V
V
GS
0
T
DS
C
J
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
Capacitance
4
12
I
50
C
D
Vishay Siliconix
iss
= 5 A
Si3457BDV
6
18
75
100
www.vishay.com
24
8
125
150
10
30
3