SI3457BDV-T1-E3 Vishay, SI3457BDV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3457BDV-T1-E3
• Description: MOSFET P-CH 30V 3.7A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3457BDV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Power - Max: 1.14W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1140 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3457BDV-T1-E3TR

Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
10 -
25
I
- Temperature (°C)
D
= 250 µA
Single Pulse
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
10 -
1
100
0.1
2
* V
Limited
125
I
D(on)
GS
Limited by R
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
10 -
1
DS(on)*
1
GS
BVDSS Limited
at which R
I
DM
Limited
10
DS(on)
1
50
40
30
20
10
0
10 -
is specified
3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10 -
100
2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
10 -
DM
JM
1
-
T
Time (s)
t
A
1
= P
S09-0136-Rev. E, 02-Feb-09
t
2
1
DM
Document Number: 72019
Z
thJA
thJA
100
t
t
1
2
(t)
= 90 °C/W
10
100
600
600