SI3457BDV-T1-E3 Vishay, SI3457BDV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3457BDV-T1-E3
• Description: MOSFET P-CH 30V 3.7A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3457BDV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Power - Max: 1.14W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1140 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3457BDV-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72019.
Document Number: 72019
S09-0136-Rev. E, 02-Feb-09
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
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Vishay Siliconix
Si3457BDV
www.vishay.com
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