SI9435BDY-T1-E3 Vishay, SI9435BDY-T1-E3 Datasheet

MOSFET P-CH 30V 4.1A 8-SOIC

SI9435BDY-T1-E3

Manufacturer Part Number
SI9435BDY-T1-E3
Description
MOSFET P-CH 30V 4.1A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI9435BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
42 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
70mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI9435BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9435BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 290
Part Number:
SI9435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI9435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI9435BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI9435BDY-T1-E3
Quantity:
150
Company:
Part Number:
SI9435BDY-T1-E3
Quantity:
3 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
S
S
S
1
2
3
4
Si9435BDY -T1-E3
Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.070 at V
0.042 at V
SO-8
0.055 at V
R
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
8
7
6
5
= - 4.5 V
(Ω)
= - 10 V
= - 6 V
(Lead (Pb)-free)
P-Channel 30-V (D-S) MOSFET
D
D
D
D
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 5.7
- 5.0
- 4.4
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
Typical
10 s
- 5.7
- 4.6
- 2.3
2.5
1.6
40
70
24
G
P-Channel MOSFET
- 55 to 150
± 20
- 30
- 30
Steady State
S
D
Maximum
- 4.1
- 3.2
- 1.1
1.3
0.8
50
95
30
Vishay Siliconix
Si9435BDY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI9435BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si9435BDY -T1-E3 (Lead (Pb)-free) Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si9435BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 3 0.0 3.2 6 Total Gate Charge (nC) g Gate Charge Document Number: 72245 S09-0870-Rev. D, 18-May- 9.6 12.8 16.0 Si9435BDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage ( Transfer Characteristics 1100 880 C iss 660 440 C oss 220 C rss Drain-to-Source Voltage (V) ...

Page 4

... Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 250 µA 75 100 125 150 100 Limited by R ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72245. Document Number: 72245 S09-0870-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si9435BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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