SI9435 Fairchild Semiconductor, SI9435 Datasheet

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SI9435

Manufacturer Part Number
SI9435
Description
P-Channel Logic Level PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Si9435DY
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DC/DC converter
Load switch
Motor Drive
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
Fairchild
9435
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
SO-8
D
Semiconductor's
D
– Continuous
– Pulsed
S
Si9435DY
Device
Parameter
S
S
G
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–5.3 A, –30 V. R
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
R
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
–30
-5.3
-20
2.5
1.2
1.0
50
25
20
= 50 m
= 80 m
@ V
@ V
January 2001
4
3
2
1
GS
GS
= –10 V
= –4.5 V
2500 units
Si9435DY Rev A(W)
Quantity
Units
C/W
C/W
W
V
V
A
C

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SI9435 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ January 2001 = –10 V DS(ON –4.5 V DS(ON Ratings Units – -5.3 A -20 2.5 W 1.2 1.0 -55 to +150 C C/W 50 C/W 25 Tape width Quantity 12mm 2500 units Si9435DY Rev A(W) ...

Page 2

... V –22 mV/ C –1 A 100 nA –100 nA –1 –1.7 – mV – 690 pF 306 2.4 nC 4.8 nC –5.3 A –0.86 –1 125°C/W when mounted on a minimum pad. Si9435DY Rev A(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.5V -7.0V -10. DRAIN CURRENT ( -5. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si9435DY Rev A( 1.4 ...

Page 4

... OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 Si9435DY Rev A(W) 30 100 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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