SI9435 Fairchild Semiconductor, SI9435 Datasheet - Page 4

• Manufacturer Part Number: SI9435
• Description: P-Channel Logic Level PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
0
Figure 7. Gate Charge Characteristics.
0.1
I
D
= -5.3A
R
SINGLE PULSE
R
0.001
DS(ON)
0.01
V
JA
T
0.1
GS
A
= 125
0.0001
1
= 25
= -10V
LIMIT
o
o
C/W
C
-V
D = 0.5
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
Q
5
1
0.1
g
, GATE CHARGE (nC)
0.05
0.02
0.001
DC
0.01
10s
V
Figure 11. Transient Thermal Response Curve.
SINGLE PULSE
DS
1s
= -5V
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
10
10
-15V
1ms
0.01
100 s
-10V
100
15
0.1
t
1
, TIME (sec)
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
5
C
-V
ISS
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
10
10
0.1
t
1
, TIME (sec)
15
C
RSS
P(pk)
Duty Cycle, D = t
T
R
J
1
R
JA
- T
100
JA
(t) = r(t) + R
A
t
20
= 125
1
SINGLE PULSE
= P * R
R
t
2
JA
T
A
= 125°C/W
o
= 25°C
C/W
10
f = 1 MHz
V
JA
GS
1
(t)
25
JA
Si9435DY Rev A(W)
/ t
= 0 V
2
1000
100
30