SI9435 Fairchild Semiconductor, SI9435 Datasheet - Page 2

no-image

SI9435

Manufacturer Part Number
SI9435
Description
P-Channel Logic Level PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9435
Manufacturer:
VISHAY
Quantity:
49
Part Number:
SI9435
Manufacturer:
SI
Quantity:
20 000
Part Number:
SI94350BDY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9435A
Manufacturer:
UPC
Quantity:
135
Part Number:
SI9435A
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9435ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9435ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9435BDY
Manufacturer:
SILICON
Quantity:
1 000
Part Number:
SI9435BDY
Quantity:
1 498
Part Number:
SI9435BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 290
Part Number:
SI9435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI9435BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Company:
Part Number:
SI9435BDY-T1-E3
Quantity:
150
Company:
Part Number:
SI9435BDY-T1-E3
Quantity:
3 000
Company:
Part Number:
SI9435BDY-T1-GE3
Quantity:
70 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
f
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
b) 105°C/W when
= 25°C unless otherwise noted
= –4.5 V, I
= 0 V, I
= –24 V,
= 20 V,
= –20 V,
= V
= –10 V,
= –10 V, I
= –10 V,
= –15 V,
= –15 V,
= –15 V,
= –10 V,
= –15 V,
= –10 V
= 0 V,
mounted on a .04 in
pad of 2 oz copper
Test Conditions
GS
, I
D
D
I
= –250 A
= –250 A
S
D
D
= –5.3 A
V
V
= –5.3 A, T
= –4.2A,
V
I
V
I
GS
DS
D
V
I
I
R
D
DS
D
D
GS
DS
= –5.3 A
GEN
= –5.3 A,
= 0 V
= 0 V
= –5.3 A
= –1 A,
= 0 V
2
= 0 V,
= –5 V
= 6
(Note 2)
J
=125 C
Min
–30
–20
–1
c) 125°C/W when mounted on a
minimum pad.
–0.86
Typ Max Units
–1.7
–22
690
306
2.4
4.8
38
54
55
12
77
10
19
11
14
4
7
–100
–5.3
–1.2
100
–1
–3
50
79
80
14
18
34
20
23
Si9435DY Rev A(W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A

Related parts for SI9435