SI9435BDY Vishay Semiconductors, SI9435BDY Datasheet

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SI9435BDY

Manufacturer Part Number
SI9435BDY
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Notes
a.
Document Number: 72245
S-50153—Rev. C, 31-Jan-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−30
(V)
J
ti
Ordering Information: Si9435BDY
t A bi
0.070 @ V
0.042 @ V
J
J
a
a
0.055 @ V
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
4
GS
GS
GS
a
a
Si9435BDY-T1 (with Tape and Reel)
Si9435BDY—E3 (Lead (Pb)-Free)
Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
= −4.5 V
= −10 V
Top View
(W)
= −6 V
P-Channel 30-V (D-S) MOSFET
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−5.7
−5.0
−4.4
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
10 secs
Typical
G
−5.7
−4.6
−2.3
2.5
1.6
40
70
24
P-Channel MOSFET
−55 to 150
"20
−30
−30
S
D
Steady State
Maximum
Vishay Siliconix
−4.1
−3.2
−1.1
1.3
0.8
50
95
30
Si9435BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI9435BDY Summary of contents

Page 1

... Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) Si9435BDY—E3 (Lead (Pb)-Free) Si9435BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si9435BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 72245 S-50153—Rev. C, 31-Jan- 12.8 16.0 Si9435BDY Vishay Siliconix Transfer Characteristics 125_C C 5 25_C −55_C − Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J www.vishay.com 25_C J 0.8 1.0 1.2 100 125 150 Safe Operating Area, Junction-to-Foot ...

Page 5

... S-50153—Rev. C, 31-Jan-05 −2 − Square Wave Pulse Duration (sec) −2 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si9435BDY Vishay Siliconix Notes Duty Cycle ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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