SI7405BDN-T1-GE3 Vishay, SI7405BDN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7405BDN-T1-GE3
• Description: MOSFET P-CH 12V 16A 1212-8
• Manufacturer: Vishay

Specifications of SI7405BDN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 8V
• Input Capacitance (ciss) @ Vds: 3500pF @ 6V
• Power - Max: 33W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.013 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7405BDN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69941
S-81549-Rev. B, 07-Jul-08
0.06
0.05
0.04
0.03
0.02
0.01
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0
8
6
4
2
0
0.0
0
0
I
D
10
5
= 13.5 A
0.5
V
V
DS
10
20
GS
V
Output Characteristics
Q
GS
- Drain-to-Source Voltage (V)
g
= 1.8 V
1.0
I
- Total Gate Charge (nC)
D
= 5 thru 2 V
15
- Drain Current (A)
30
Gate Charge
1.5
20
40
V
DS
= 6 V
25
50
2.0
V
30
60
V
V
GS
GS
V
V
DS
GS
GS
2.5
= 1.5 V
= 1 V
= 9.6 V
= 2.5 V
35
= 4.5 V
70
New Product
3.0
40
80
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
oss
0.3
V
V
DS
Transfer Characteristics
T
GS
3
V
0
J
GS
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
T
T
= 4.5 V, 2.5 V, 1.8 V, I
C
Capacitance
C
25
0.6
= 125 °C
= 25 °C
50
6
Vishay Siliconix
Si7405BDN
0.9
C
75
iss
www.vishay.com
D
100
9
T
= 13.5 A
C
1.2
= - 55 °C
C
125
rss
150
1.5
12
3