SI7405BDN-T1-GE3 Vishay, SI7405BDN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7405BDN-T1-GE3
• Description: MOSFET P-CH 12V 16A 1212-8
• Manufacturer: Vishay

Specifications of SI7405BDN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 13.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 8V
• Input Capacitance (ciss) @ Vds: 3500pF @ 6V
• Power - Max: 33W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.013 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7405BDN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69941
S-81549-Rev. B, 07-Jul-08
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40
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0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
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- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
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New Product
150
35
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25
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15
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0
25
50
T
C
- Case Temperature (°C)
Power Derating
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Vishay Siliconix
100
Si7405BDN
www.vishay.com
125
150
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