SI7405BDN-T1-GE3 Vishay, SI7405BDN-T1-GE3 Datasheet - Page 7

MOSFET P-CH 12V 16A 1212-8

SI7405BDN-T1-GE3

Manufacturer Part Number
SI7405BDN-T1-GE3
Description
MOSFET P-CH 12V 16A 1212-8
Manufacturer
Vishay
Datasheet

Specifications of SI7405BDN-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
115nC @ 8V
Input Capacitance (ciss) @ Vds
3500pF @ 6V
Power - Max
33W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.013 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
3600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-16A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7405BDN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
IDT
Quantity:
686
Part Number:
SI7405BDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7405BDN-T1-GE3
Quantity:
70 000
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Document Number: 91000
www.vishay.com
Revision: 11-Mar-11
1

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