SI7108DN-T1-E3 Vishay, SI7108DN-T1-E3 Datasheet

MOSFET N-CH 20V 14A 1212-8

SI7108DN-T1-E3

Manufacturer Part Number
SI7108DN-T1-E3
Description
MOSFET N-CH 20V 14A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI7108DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.9 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0049 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
88 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
14 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
22A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
4.9mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0049Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
PowerPAK 1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7108DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7108DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7108DN-T1-E3
Quantity:
54 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated)
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73216
S-80581-Rev. E, 17-Mar-08
Ordering Information: Si7108DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
DS
20
(V)
8
3.30 mm
D
7
D
0.0061 at V
0.0049 at V
6
PowerPAK 1212-8
D
R
N-Channel 20-V (D-S) Fast Switching MOSFET
Si7108DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
DS(on)
Bottom View
D
GS
GS
(Ω)
J
a
= 4.5 V
= 10 V
1
= 150 °C)
S
a
2
S
3
S
a
3.30 mm
I
4
D
19.7
22
G
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0 1 mH
T
T
T
T
(Typ.)
20
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Synchronous Rectification
• Point-of-Load Converters
• Protection Devices
• Hot Swap
Symbol
Symbol
T
R
R
Ultra Low On-Resistance
Low 1.07 mm Profile
100 % R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen II Power MOSFET for
Typical
10 s
17.6
3.2
3.8
2.0
1.9
22
24
65
G
N-Channel MOSFET
- 55 to 150
± 16
260
20
60
22
24
Steady State
D
S
Maximum
11.2
1.3
1.5
0.8
2.4
14
33
81
Vishay Siliconix
Si7108DN
®
www.vishay.com
Package with
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SI7108DN-T1-E3

SI7108DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7108DN-T1-E3 (Lead (Pb)-free) Si7108DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7108DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73216 S-80581-Rev. E, 17-Mar-08 3000 2500 2000 1500 1000 0.015 0.012 0.009 0.006 °C J 0.003 0.000 0.8 1.0 1.2 Si7108DN Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si7108DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) Limited ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73216. Document Number: 73216 S-80581-Rev. E, 17-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7108DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN ...

Page 7

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 8

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 9

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) Vishay Siliconix TSOP-8 PPAK 1212 Dual Single Dual Single ...

Page 10

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 11

... RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix 0.010 (0.255) www.vishay.com 7 ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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