IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet - Page 3

• Manufacturer Part Number: IRFBC30ALPBF
• Description: MOSFET N-CH 600V 3.6A TO-262
• Manufacturer: Vishay

Specifications of IRFBC30ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 2.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBC30ALPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91109
S10-2433-Rev. B, 25-Oct-10
0.01
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
J
4.5V
4.5V
10
10
°
°
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
0.01
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
4.0
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I =
D
T = 150 C
J
3.6A
V
T , Junction Temperature ( C)
5.0
GS
J
°
, Gate-to-Source Voltage (V)
0
T = 25 C
J
20 40 60
6.0
°
Vishay Siliconix
V
20µs PULSE WIDTH
7.0
DS
80 100 120 140 160
= 50V
www.vishay.com
V
°
8.0
GS
=
10V
9.0
3