IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet - Page 4

• Manufacturer Part Number: IRFBC30ALPBF
• Description: MOSFET N-CH 600V 3.6A TO-262
• Manufacturer: Vishay

Specifications of IRFBC30ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 2.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBC30ALPBF

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
100
10
1
20
16
12
8
4
0
1
0
I =
D
3.6A
V DS , Drain-to-Source Voltage (V)
4
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
8
V
V
V
DS
DS
DS
Coss
Crss
12
Ciss
= 480V
= 300V
= 120V
FOR TEST CIRCUIT
f = 1 MHZ
SEE FIGURE
100
16
SHORTED
20
13
1000
24
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
0.1
10
10
1
1
0.4
10
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
T = 150 C
V
V
J
SD
DS
°
°
0.6
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
100
BY R
0.8
DS(on)
S10-2433-Rev. B, 25-Oct-10
T = 25 C
J
Document Number: 91109
10us
100us
1ms
10ms
1000
°
1.0
V
GS
= 0 V
10000
1.2