IRFBC30ALPBF Vishay, IRFBC30ALPBF Datasheet - Page 6

MOSFET N-CH 600V 3.6A TO-262

IRFBC30ALPBF

Manufacturer Part Number
IRFBC30ALPBF
Description
MOSFET N-CH 600V 3.6A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRFBC30ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
2.2 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
2.2ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBC30ALPBF
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
400
300
200
100
0
25
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Starting T , Junction Temperature ( C)
Q
50
GS
J
Charge
Q
75
Q
GD
G
100
TOP
BOTTOM
125
°
1.6A
2.3A
3.6A
I D
150
740
720
700
680
660
640
Fig. 12d - Typical Drain-to-Source Voltage vs.
0.0
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Avalanache Current
I AV , Avalanche Current ( A)
1.0
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
2.0
S10-2433-Rev. B, 25-Oct-10
Document Number: 91109
D.U.T.
I
D
3.0
+
-
V
DS
4.0

Related parts for IRFBC30ALPBF