RHK003N06T146 Rohm Semiconductor, RHK003N06T146 Datasheet - Page 2

• Manufacturer Part Number: RHK003N06T146
• Description: MOSFET N-CH 60V 300MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of RHK003N06T146

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 33pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RHK003N06T146TR

Transistors
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
0.2
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
0.7
1.1
0.6
0.5
33
14
13
80
−
−
−
−
−
9
6
5
3
−
Max.
Max.
±10
1.2
2.5
1.0
1.5
−
1
−
−
−
−
−
−
−
−
6
−
−
Unit
Unit
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
Ω
V
V
S
V
V
I
V
V
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
V
I
I
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
GS
= 300mA, V
= 1mA, V
= 300mA, V
= 300mA, V
= 150mA
= 300mA
=200Ω
=10Ω
= 60V, V
= 10V, I
= 10V, I
= 10V
=±20V, V
=0V
= 10V
= 10V
30V
30 V
Conditions
Conditions
GS
D
D
GS
= 1mA
= 300mA
DS
=0V
GS
GS
GS
=0V
=0V
=0V
= 10V
= 4V
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