QS5U16TR Rohm Semiconductor, QS5U16TR Datasheet - Page 2
![MOSFET N-CH 30V 2A TSMT5](/photos/5/48/54817/tsmt5_tsmt5_pkg_sml.jpg)
QS5U16TR
Manufacturer Part Number
QS5U16TR
Description
MOSFET N-CH 30V 2A TSMT5
Manufacturer
Rohm Semiconductor
Datasheet
1.QS5U16TR.pdf
(5 pages)
Specifications of QS5U16TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
175pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
TSMT5
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
2 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
∗Pulsed
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
<MOSFET>
<Body diode (source-drain)>
<Di>
Forward voltage
Reverse current
Source current
(Body diode)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
∗ Pulsed
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Parameter
charge
charge
Parameter
Continuous
Pulsed
Continuous
Pulsed
•
V
Symbol
1cyc. ∗3 Mounted on a ceramic board
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
GS (th)
d (on)
d (off)
Q
Q
GSS
Y
Q
DSS
t
t
oss
rss
iss
gd
V
fs
r
f
gs
g
V
I
SD
R
F
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
0.5
1.5
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Symbol
V
V
Tstg
Typ.
Tch
V
I
110
175
2.8
0.6
0.8
I
I
P
V
FSM
P
P
71
76
50
25
10
21
Tj
DSS
GSS
I
I
I
DP
SP
−
−
−
−
−
8
8
RM
D
S
F
D
R
D
D
−
−
−
−
∗1
∗1
∗3
∗2
∗3
∗3
Max.
100
107
154
1.5
3.9
10
−
1
−
−
−
−
−
−
−
−
−
−
0.36
0.47
100
1.2
−55 to +150
Limits
Unit
mΩ
mΩ
mΩ
±2.0
±8.0
1.25
nC
nC
nC
µA
µA
pF
pF
pF
150
150
ns
ns
ns
ns
0.8
3.2
0.9
0.5
2.0
0.7
V
V
S
30
12
30
20
µA
V
V
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
=1mA, / V
=2.0A, V
=2.0A, V
=2.0A, V
=1.0A
L
G
=2.0A
=15Ω
=10Ω
=12V / V
=30V / V
=10V / I
=10V, I
=10V
=0V
=4.5V
=4.5V
I
I
I
V
S
F
F
R
=3.2A / V
=0.1A
=0.5A
15V
15 V
W/ELEMENT
W/ELEMENT
W / TOTAL
=20V
Unit
Conditions
GS
GS
GS
D
°C
°C
°C
D
V
V
A
A
A
A
V
V
A
A
GS
=2.0A
DS
=1mA
=4.5V
=4V
=2.5V
GS
=0V
=0V
=0V
GS
=0V
Rev.A
QS5U16
2/4