QS6U24TR Rohm Semiconductor, QS6U24TR Datasheet - Page 4

• Manufacturer Part Number: QS6U24TR
• Description: MOSFET P-CH 30V 1A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6U24TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 400 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 90pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistor
Measurement circuits
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input
Fig.11 Switching Time Measurement Circuit
Fig.13 Gate Charge Measurement Circuit
Characteristics
I
G(Const)
Ta=25°C
V
I
R
Pulsed
D
DD
G
=−1.2A
=10Ω
=−15V
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
R
V
V
L
L
DD
DD
V
V
DS
DS
V
V
V
GS
Fig.14 Gate Charge Waveforms
GS
DS
V
Fig.12 Switching Waveforms
G
t
Q
d(on)
gs
10%
t
50%
on
Q
90%
gd
Q
Pulse Width
t
10%
r
g
90%
t
d(off)
Charge
t
off
50%
Rev.B
t
90%
10%
r
QS6U24
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