QS5U27TR Rohm Semiconductor, QS5U27TR Datasheet
QS5U27TR
Specifications of QS5U27TR
Available stocks
Related parts for QS5U27TR
QS5U27TR Summary of contents
Page 1
Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package. 2) Low on-state resistance with fast switching. 3) ...
Page 2
Transistor Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body diode) Pulsed Channel temperature Power dissipation <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature ...
Page 3
Transistor Electrical characteristic curves 10 =−10V V DS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=−25°C 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 1000 =−2. ...
Page 4
Transistor 8 Ta=25°C V =−15V =−1. =10Ω G Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics Measurement circuits ...
Page 5
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...