RTL020P02TR Rohm Semiconductor, RTL020P02TR Datasheet

MOSFET P-CH 20V 2A TUMT6

RTL020P02TR

Manufacturer Part Number
RTL020P02TR
Description
MOSFET P-CH 20V 2A TUMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RTL020P02TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
4.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
430pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TUMT6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.135 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
1000 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
DC-DC Converter (−20V, −2.0A)
RTL020P02
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
DC-DC converter
Silicon P-channel
MOS FET
Type
RTL020P02
Applications
Features
Structure
Packaging specifications
Package
Code
Basic ordering unit (pieces)
Taping
3000
TR
External dimensions (Unit : mm)
Equivalent circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
TUMT6
(6)
(1)
1pin mark
Abbreviated symbol :
(5)
(2)
0.65
(6)
(1)
0.3
2
2.0 0.1
1.3 0.1
0.1
0.05
0.65
(5)
(2)
(4)
(3)
(4)
1
(3)
Each lead has same dimensions
0.17 0.05
WU
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
RTL020P02
0.85MAX
0.77 0.05
0~0.1
1/4

Related parts for RTL020P02TR

RTL020P02TR Summary of contents

Page 1

Transistors DC-DC Converter (−20V, −2.0A) RTL020P02 Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Applications DC-DC converter Structure Silicon P-channel MOS FET Packaging specifications Package Taping Type Code ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation Channel temperature Range of Storage temperature Duty cycle 1% 2 Mounted on a ...

Page 3

Transistors Electrical characteristic curves 10 V 10V DS Pulsed 1 Ta 125 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : V (V) GS ...

Page 4

Transistors Measurement circuits D.U. Fig.10 Switching Time Measurement Circuit G(Const) D.U. Fig.12 Gate Charge Measurement Circuit ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords