QS5U28TR Rohm Semiconductor, QS5U28TR Datasheet
QS5U28TR
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QS5U28TR Summary of contents
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Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low ...
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Transistor Absolute maximum ratings (Ta=25°C) < > MOSFET Parameter Symbol Drain-source voltage V Gate-source voltage V Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Channel temperature Power dispation < > Di Parameter Symbol Repetitive peak reverse voltage Reverse ...
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Transistor Electrical characteristic curves 10 = −10V V DS Pulsed 1 Ta=125°C 0.1 75°C 25°C −25°C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 1000 = −2. ...
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Transistor 8 Ta=25°C = −15V − =10Ω G Pulsed TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...