2SK2887TL Rohm Semiconductor, 2SK2887TL Datasheet - Page 4

• Manufacturer Part Number: 2SK2887TL
• Description: MOSFET N-CH 200V 3A DPAK
• Manufacturer: Rohm Semiconductor

Specifications of 2SK2887TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2887TL; 2SK2887TLTR

Transistors
2SK2887
FSwitching characteristics
Fmeasurement circuit
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