RDD050N20TL Rohm Semiconductor, RDD050N20TL Datasheet
RDD050N20TL
Specifications of RDD050N20TL
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RDD050N20TL Summary of contents
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Transistors 10V Drive Nch MOSFET RDD050N20 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching Packaging specifications Package Taping Type Code 2500 Basic ordering unit (pieces) RDD050N20 ...
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Transistors Electrical characteristics (Ta=25°C) Symbol Parameter Gate-Source Leakage V Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off ...
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Transistors Electrical characteristic curves 100 PW=100us 10 1ms 1 DC OPERATING 0.1 Tc=25°C Single Pulsed 0. 100 DRAIN-SOURCE VOLTAGE : I (A) D Fig.1 Maximum Safe Operating Area 6.4 =10V V DS =1mA I 5.6 D 4.8 4 ...
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Transistors 1000 C iss 100 C oss 10 f=1MHz = rss Ta=25°C Pulsed 1 0 100 1000 DRAIN SOURCE VOLTAGE : V (V) DS Fig.10 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C =100V V DD ...
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Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit RDD050N20 Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform Rev.A 5/5 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...