STD60N3LH5 STMicroelectronics, STD60N3LH5 Datasheet - Page 4

• Manufacturer Part Number: STD60N3LH5
• Description: MOSFET N-CH 30V 48A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7971-2; STD60N3LH5

Electrical characteristics
2
4/21
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
DS(on)
GS(th)
C
C
Q
Q
GSS
DSS
R
Q
oss
gs1
gs2
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
gate-to-source
Parameter
GS
= 0)
STD60N3LH5, STP60N3LH5, STU60N3LH5, STU60N3LH5-S
Doc ID 14079 Rev 4
V
V
V
V
(Figure
V
V
(Figure
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
open drain
I
V
V
V
V
V
SMD version
V
V
SMD version
V
D
GS
GS
GS
DS
DD
DD
DS
DS
GS
DS
GS
GS
GS
GS
= 250 µA, V
=0
=15 V, I
=15 V, I
= V
= 10 V, I
= 10 V, I
= 5 V, I
= 5 V, I
=25 V, f=1 MHz,
=5 V
=5 V
Test conditions
Test conditions
= 30 V
= 30 V,Tc = 125 °C
= ± 20 V
GS
14)
19)
, I
D
D
D
D
D
D
D
= 24 A
= 24 A
= 48 A
= 48 A
= 24 A
= 24 A
= 250 µA
GS
= 0
Min.
Min.
30
1
-
-
-
-
0.0072
0.0076 0.0084
0.0088
0.0092 0.0114
Typ.
1350
Typ.
265
1.8
8.8
4.7
2.2
2.2
2.5
1.1
32
0.008
0.011
Max.
Max.
1620
±
12.3
318
6.6
3.1
3.1
3.5
1.3
100
10
38
1
3
Unit
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω
Ω
Ω
Ω